JPS6097659A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS6097659A
JPS6097659A JP58205174A JP20517483A JPS6097659A JP S6097659 A JPS6097659 A JP S6097659A JP 58205174 A JP58205174 A JP 58205174A JP 20517483 A JP20517483 A JP 20517483A JP S6097659 A JPS6097659 A JP S6097659A
Authority
JP
Japan
Prior art keywords
diode
region
type
resistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58205174A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058582B2 (en]
Inventor
Takeshi Takanori
高乗　健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58205174A priority Critical patent/JPS6097659A/ja
Publication of JPS6097659A publication Critical patent/JPS6097659A/ja
Priority to US07/073,851 priority patent/US4860083A/en
Publication of JPH058582B2 publication Critical patent/JPH058582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58205174A 1983-11-01 1983-11-01 半導体集積回路 Granted JPS6097659A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58205174A JPS6097659A (ja) 1983-11-01 1983-11-01 半導体集積回路
US07/073,851 US4860083A (en) 1983-11-01 1987-07-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58205174A JPS6097659A (ja) 1983-11-01 1983-11-01 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP40231890A Division JPH067581B2 (ja) 1990-12-14 1990-12-14 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6097659A true JPS6097659A (ja) 1985-05-31
JPH058582B2 JPH058582B2 (en]) 1993-02-02

Family

ID=16502645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58205174A Granted JPS6097659A (ja) 1983-11-01 1983-11-01 半導体集積回路

Country Status (2)

Country Link
US (1) US4860083A (en])
JP (1) JPS6097659A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608319A1 (fr) * 1986-12-16 1988-06-17 Thomson Semiconducteurs Dispositif de protection contre les surtensions, a jonction plane

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766958B2 (ja) * 1989-03-20 1995-07-19 株式会社東芝 静電保護回路
FR2646019B1 (fr) * 1989-04-14 1991-07-19 Sgs Thomson Microelectronics Resistance spirale haute tension
JPH10256574A (ja) 1997-03-14 1998-09-25 Toko Inc ダイオード装置
JP2000150918A (ja) * 1998-11-05 2000-05-30 Toko Inc ダイオード装置
US7489488B2 (en) * 2005-10-19 2009-02-10 Littelfuse, Inc. Integrated circuit providing overvoltage protection for low voltage lines
US7943959B2 (en) * 2007-08-28 2011-05-17 Littelfuse, Inc. Low capacitance semiconductor device
US7638816B2 (en) * 2007-08-28 2009-12-29 Littelfuse, Inc. Epitaxial surge protection device
US8709833B2 (en) * 2011-12-22 2014-04-29 International Business Machines Corporation Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124464A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Semiconductor integrated circuit device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230429A (en) * 1962-01-09 1966-01-18 Westinghouse Electric Corp Integrated transistor, diode and resistance semiconductor network
GB1095413A (en]) * 1964-12-24
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US4438449A (en) * 1967-03-03 1984-03-20 Hitachi, Ltd. Field effect semiconductor device having a protective diode with reduced internal resistance
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5120267B2 (en]) * 1972-05-13 1976-06-23
CH560463A5 (en]) * 1972-09-26 1975-03-27 Siemens Ag
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
JPS6057707B2 (ja) * 1978-01-25 1985-12-16 株式会社日立製作所 記憶回路
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS56158478A (en) * 1980-05-10 1981-12-07 Toshiba Corp Semiconductor device
FR2494041B1 (fr) * 1980-11-07 1987-01-23 Radiotechnique Compelec Element de circuit integre pour memoire bipolaire, son procede de realisation et cellule memoire realisee a l'aide dudit element
DE4138661C1 (en]) * 1991-11-25 1993-06-03 Siemens Ag, 8000 Muenchen, De

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124464A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608319A1 (fr) * 1986-12-16 1988-06-17 Thomson Semiconducteurs Dispositif de protection contre les surtensions, a jonction plane

Also Published As

Publication number Publication date
US4860083A (en) 1989-08-22
JPH058582B2 (en]) 1993-02-02

Similar Documents

Publication Publication Date Title
US3226613A (en) High voltage semiconductor device
JPS6159852A (ja) 半導体装置の製造方法
JPS6097659A (ja) 半導体集積回路
US3825451A (en) Method for fabricating polycrystalline structures for integrated circuits
JP3099917B2 (ja) 電界効果トランジスタ
EP0206136B1 (en) Semiconductor device manufacturing method
JPS5984435A (ja) 半導体集積回路及びその製造方法
JPH11145155A (ja) 半絶縁ポリシリコン（ｓｉｐｏｓ）膜を用いた電力半導体装置の製造方法
JPH0312782B2 (en])
JPS5856460A (ja) 半導体装置の製造方法
JPH0472771A (ja) Ｍｏｓｆｅｔ
JPH0499058A (ja) 半導体集積回路
EP0851487A1 (en) Antimony-phosphor buried layer for a MOs FET or like semiconductor device, and method of fabrication
JPS6174361A (ja) 埋め込み抵抗半導体装置
JP2712889B2 (ja) 半導体装置の製造方法
JPS60123062A (ja) 半導体集積回路の製造方法
JPS5879735A (ja) 半導体集積回路
JPS617664A (ja) 半導体装置およびその製造方法
JPS61208264A (ja) 半導体装置
JPS62112379A (ja) 半導体装置
JPH0997798A (ja) バイポーラトランジスタの製造方法
JPS6353712B2 (en])
JPH03196637A (ja) 半導体集積回路装置
JPS6065566A (ja) 半導体装置
JPS61150231A (ja) 半導体装置